Publications
- K. V. Avagyan. Aspects development of the up-to-date electron microscopy and spectroscopy at high resolution. New generation of high-resolution electron microscopes with spectrometers, attendant equipment and methodology. Author`s certificate N 00007, p. 1-13, Yerevan, Armenia, 1998.
- K. V. Avagyan, V.M. Arutyunyan, F.V. Gasparyan, V.Sh. Marukyan. Electron microscope stage. Author`s certificate N 1636895, p. 1-6, Moscow, Russia, 1990.
- V. M. Arutyunyan, F.V. Gasparyan, R.C. Barsegyan, Z.N. Adamyan, K.V. Avagyan. Electron flux detector of silicon, p. 60-61, Yerevan State University, Armenia, 1985.
- K. V. Avagyan, Z.N. Adamyan, V.M. Arutyunyan, F.V. Gasparyan. Electron flux detectors on the basis of p+-n-n+ – structures of zinc-compensated silicon. Electronnaya tekhnika, v. 2, N 3 (176), p. 10-17, Moscow, Russia, 1985.
- K. V. Avagyan, Z.N. Adamyan, F.V. Gasparyan. On contribution of gradient amplification to the electron flux detector sensitivity. Scientific conference, Dilijan, Armenia, 1985.
- K. V. Avagyan, Z.N. Adamyan. A Unit for an electron microscope to stady the electron beam effect on semiconductors. Pribory I tekhnika eksperimenta, N 1, p. 202-203, Moscow, Russia, 1984.
- K. V. Avagyan, Z.N. Adamyan, V.M. Arutyunyan, F.V. Gasparyan. Electron flux detectors of zinc-compensated silicon. Scientific conference, Byurakan, Armenia, 1983.
- K. V. Avagyan. On Methods of experimental study of semiconductor devices in case of permanent and modulated electron bombardment. Molodoy naychny rabotnik, N 2 (36), p. 115-118, Yerevan State University, Armenia, 1982.
- K. V. Avagyan, Z.N. Adamyan, V.M. Arutyunyan. Static and operation characteristics of zinc-compensated silicon diodes in case of electron excitation. Uchenye zapiski, N 3, p. 52-64, Yerevan State University, Armenia, 1981.
- Y. M. Poghosyan, T.A. Poghosyan, K.V. Avagyan. A Unit for the electron microscope UEMV-100 to study magnetic structure of thin films. Zavodskaya laboratoria, v. XXXVI, N 3, p. 362-363, Moscow, Russia, 1970.